High electron mobility transistors

descriptionPublicationkeyboard_double_arrow_right Part of book or chapter of book , Other literature type 01 Jan 1991 English Publisher:Institution of Engineering and Technology

Authors: Paul J. Tasker;

doi: 10.1049/pbed008e_ch5

High electron mobility transistors

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Abstract

The High Electron Mobility Transistor (HEMT) has achieved its predicted performance goals, operating at high frequencies (>60 GHz) and high speeds (>10 Gbit/s). As a consequence, it is becoming the transistor of choice for millimetre wave and high speed applications; stimulating the development of new monolithic integrated electronic and optoelectronic analogue and digital circuits. These circuits will be utilised in radar, satellite communications and computing applications.

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