Summary form only given. Low pressure plasma micro-machining etches require rates and mask selectivities far greater than those normally associated with microelectronic device fabrication. Induction coupled plasma generation with separate rf bias applied to the substrate is an appropriate strategy for process pressures around 1 Pa. The different means of creating stable plasmas with dual excitation will be discussed: phase locked supplies, electrostatically screening, and dual frequency excitation. Practical aspects of process tool design will be considered: plasma source design, wafer temperature control, plasma striking, and material selection. Process strategies and process results, including aspect ratio dependent etch rate, will be discussed, with their implications for micromachining designs. (1 page)