A novel self‐aligned (SA) graphene FET (GFET) with small access resistance is fabricated. Only one photolithography is needed to define the gate and high gate capacitive efficiency is obtained using a metal gate‐stack. In addition, damages to graphene resulting from the plasma are avoided. The cap metal layer is used as an etch stop layer and the etched stem metal layer is used as a support layer, which leads to the simplification of the fabrication process and the formation of the SA structure. Based on the same gate length (3 µm), the normalized G m of GSA‐GFET is 8 times larger than the reported SA‐GFET. Compared with the non‐SA‐GFET, the contact resistance of the SA‐GFET is reduced by 50% and G m is 3.2 times improved.