Recently, multi‐level cell (MLC) spin‐transfer torque random access memories (STT‐RAMs) are attracting great attentions as an alternative to static or dynamic random access memories. They have the benefits of capacity, but the penalties of performance, and power consumption caused by a complicated two‐ or three‐phase access. An MLC STT‐RAM controller that eliminates the MLC STT‐RAM penalties for multimedia applications is proposed. The key ideas are frame‐level data‐to‐memory mapping and frame‐type aware frame assignment techniques that make a two‐ or three‐phase access no longer required. Experimental results show that the proposed MLC STT‐RAM controller achieves 56.1% higher memory performance, and 4.2% lower memory power consumption than the conventional controller for industrial multimedia applications.