Demonstration of wafer‐level light emitting diode with very high output power

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 2014 English Publisher:Institution of Engineering and Technology (IET)Journal:Electronics Letters, volume 50, pages 1,970-1,972 (issn: 0013-5194, eissn: 1350-911X,

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Authors: Yibin Zhang; Fei Xu; Desheng Zhao; Hongjuan Huang; Wei Wang; Jianwei Xu; Yong Cai; +5 Authors

doi: 10.1049/el.2014.3657

Demonstration of wafer‐level light emitting diode with very high output power

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Abstract

Based on the optimised high‐voltage network design and the resistance matching technique, a wafer‐level light emitting diode (WL‐LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum efficiency of the fabricated WL‐LED was measured to be 24% at a driving current of 4 A.

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Peking University
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