Researchers at TriQuint Semiconductor in the US have developed a GaN high electron mobility transistor (HEMT) on Si substrate that can deliver an X-band power performance comparable to that of a standard GaN on SiC device. It has the highest power added efficiency (PAE) ever achieved for these devices: 65 at 10 GHz, and this result makes GaN on Si technology an attractive, cost-effective solution for several military and commercial applications, such as radar and wireless communications in the S- to X-band range (2-12 GHz).