Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2016 English Publisher:Royal Society of Chemistry (RSC)Journal:Chemical Communications, volume 52, pages 5,007-5,010 (issn: 1359-7345, eissn: 1364-548X,

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Authors: Ruihong, Zhang; Seonghyuk, Cho; Daw Gen, Lim; Xianyi, Hu; Eric A, Stach; Carol A, Handwerker; Rakesh, Agrawal;

doi: 10.1039/c5cc09915c

pmid: 26981781

Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

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Abstract

Bulk metals and metal chalcogenides are found to dissolve in primary amine–dithiol solvent mixtures at ambient conditions.

Related Organizations

Brookhaven National Laboratory
United States
Center for Functional Nanomaterials
United States
Center for Functional Nanomaterials
Purdue University System
United States
Purdue University West Lafayette
United States

Keywords

Surface Properties, Zinc, Tin, Solar Energy, Chalcogens, Electronics, Particle Size, Copper

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