AbstractTransition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2in SF6+ N2plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2substrate and the remaining MoS2layers. The etching rates can be tuned to achieve complete MoS2removal and any desired number of MoS2layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes and may be applicable for a broader range of 2D materials and intended device applications.