In this work, we propose Silicon based broad-band near infrared Schottky barrier photodetectors. The devices operate beyond 1200 nm wavelength and exhibit photoresponsivity values as high as 3.5 mA/W with a low dark current density of about 50 pA/µm(2). We make use of Au nanoislands on Silicon surface formed by rapid thermal annealing of a thin Au layer. Surface plasmons are excited on Au nanoislands and this field localization results in efficient absorption of sub-bandgap photons. Absorbed photons excite the electrons of the metal to higher energy levels (hot electron generation) and the collection of these hot electrons to the semiconductor results in photocurrent (internal photoemission). Simple and scalable fabrication makes these devices suitable for ultra-low-cost NIR detection applications.