Optimization of the Topology of Photoresistors

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2004 English Publisher:Springer Science and Business Media LLCJournal:Measurement Techniques, volume 47, pages 47-52 (issn: 0543-1972, eissn: 1573-8906,

Authors: Yu. N. Dolganin; M. A. Savchenko;

doi: 10.1023/b:mete.0000022503.64541.c5

Optimization of the Topology of Photoresistors

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Abstract

Phenomenological definitions of generation-recombination noise, survival time, and the photoelectric gain factor for photoresistors are given. The optimal – i.e., from the point of view of detectability – topology in the case where shaded portions of the sensitive element are applied is determined.

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