Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD

descriptionPublicationkeyboard_double_arrow_right Article 01 Nov 2006 English Publisher:Elsevier BVJournal:Thin Solid Films, volume 515, pages 1,117-1,120 (issn: 0040-6090,

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Authors: Ta-Shan Chang; Ting-Chang Chang; Po-Tsun Liu; C.Y. Chiang; S.C. Chen; Feng-Sheng Yeh;

doi: 10.1016/j.tsf.2006.07.053

Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD

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Abstract

Abstract In this study a low- k material, methyl-silsesquiazane (MSZ) has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays. Compared with the conventional nitride film ( k ∼ 7), the MSZ passivation layer exhibits a low residual stress and low dielectric constant ( k ∼ 2.6) which lowers the RC delay in a device. The high transmittance and good planarization characteristics of a low- k MSZ film enhance the brightness and aperture ratio of thin-film transistors liquid crystal displays (TFT-LCDs).

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