Surface photovoltage and photoelectron spectra of GaP

descriptionPublicationkeyboard_double_arrow_right Article 01 Feb 2007 English Publisher:Elsevier BVJournal:Solid State Communications, volume 141, pages 284-287 (issn: 0038-1098,

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Authors: Shailendra Kumar; D.M. Phase; Sanjay Porwal; T.K. Sharma;

doi: 10.1016/j.ssc.2006.10.038

Surface photovoltage and photoelectron spectra of GaP

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Abstract

Surface photovoltage (SPV) and photoelectron spectra (PES) of crystalline n-GaP wafers have been studied at 300 K. The magnitude of the surface potential (Vs) decreases in the presence of photons with energy more than the band gap, however the magnitude of Vs increases in the presence of photons with sub band gap energy. The SPV spectrum is helpful in understanding the rigid shift of PES spectra of n-GaP wafers towards higher kinetic energy in the presence of secondary white light from a tungsten lamp.

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