Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate

descriptionPublicationkeyboard_double_arrow_right Article 01 Aug 2018 English Publisher:Elsevier BVJournal:Superlattices and Microstructures, volume 120, pages 753-758 (issn: 0749-6036,

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Authors: Zeheng Wang; Jun Cao; Ruize Sun; Fangzhou Wang; Yuanzhe Yao;

doi: 10.1016/j.spmi.2018.06.045

Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate

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Abstract

Abstract A short channel AlGaN/GaN HEMT with AlGaN/InGaN/AlGaN quantum well plate is proposed and investigated. Benefited by the 2DEG confining effect and plated-like function, the QWP-HEMT exhibits weaker short channel effects and stronger reverse blocking, where in maximum the DIBL reduction and the critical electric field improvement are 88.9% and 88.2% respectively, which suggests the potential for its high-power application in small scale integration.

Related Organizations

University of Electronic Science and Technology of China
China (People's Republic of)
State Key Laboratory of Electronic Thin Films and Integrated Devices
China (People's Republic of)
National University of Singapore
Singapore

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