
B redistribution in a B-implanted polycrystalline NiSi layer has been investigated using atom probe tomography and secondary ion mass spectrometry. The B accumulations observed at the SiO2/NiSi interface and in the NiSi bulk are due to B clustering. B cluster formation at these two locations is shown to have a major impact upon the entire B distribution observed after annealing. The formation of B clusters in the NiSi bulk may be due to implantation-related defects.
Multidisciplinary, DOPANTS, Materials Science, Implantation, DIFFUSION, Ni-suilcides, SILICIDED METAL GATES, Cluster, SEGREGATION, Metallurgy & Metallurgical Engineering, Nanoscience & Nanotechnology, Boron
Multidisciplinary, DOPANTS, Materials Science, Implantation, DIFFUSION, Ni-suilcides, SILICIDED METAL GATES, Cluster, SEGREGATION, Metallurgy & Metallurgical Engineering, Nanoscience & Nanotechnology, Boron
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