
Abstract The integration of complementary metal oxide semiconductor (CMOS) and microelectromechanical systems (MEMS) can improve the performance of the MEMS, allows for smaller packages and leads to a lower packaging and instrumentation cost. Polycrystalline silicon–germanium (poly-SiGe) has already shown its potential for integrating MEMS and CMOS in a MEMS-last approach. The current state-of-the-art for poly-SiGe MEMS integration and the needs for the future will be addressed in this article. Market trends are translated into a roadmap for MEMS integration.
| selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | 33 | |
| popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network. | Top 10% | |
| influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Top 10% | |
| impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Top 10% |
