A Low Dropout Voltage Regulated Bulk-driven CMOS Current Mirror

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 2016 English Publisher:Elsevier BVJournal:Procedia Computer Science, volume 86, pages 95-99 (issn: 1877-0509,

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Authors: Minwong, Nutthawut; Sooksood, Kriangkrai; Thanachayanont, Apinunt;

doi: 10.1016/j.procs.2016.05.024

A Low Dropout Voltage Regulated Bulk-driven CMOS Current Mirror

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Abstract

AbstractNovel bulk-driven current mirror (CM) and bulk-driven cascode CM are presented in this paper. Bulk-driven technique is employed to overcome a threshold voltage limitation. Proposed circuits operate at 1V power supply. By using a negative feedback, high accuracy input and output transfer characteristic over wide current range is achieved. The proposed circuits are simulated using a 0.18μm CMOS technology. The headroom voltage is 0.11V for the proposed bulk driven CM and 0.16V for the proposed bulk driven cascode CM.

Related Organizations

King Mongkut's Institute of Technology Ladkrabang
Thailand

Keywords

Bulk-driven Technique, Current Mirror, Low Voltage

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