Etch rate optimization in reactive ion etching of epoxy photoresists
Copyright policy )Etch rate optimization in reactive ion etching of epoxy photoresists
AbstractIn this paper, the influence of several reactive ion etching (RIE) process parameters on epoxy photoresist etch rates is compared and optimized. Four types of epoxies were examined: SU-8 2050, EpoCore, hardbaked and non-hardbaked EpoClad. The parameters that were tested are: O2 flow, SF6 flow, chamber pressure and RF power. For the experiments, a Box-Behnken design of experiment (DOE) [1] was selected, allowing us to examine 4 different non-linear parameters with 25 experiments. The collected data allows to optimize an etching process, taking into account compatibility with other materials and required etch rates.
- KU Leuven Belgium
- Katholieke Universiteit Leuven Belgium
Chemistry(all), Chemical Engineering(all), Reactive ion etching, epoxy, photoresist, SU-8, EpoClad, EpoCore
Chemistry(all), Chemical Engineering(all), Reactive ion etching, epoxy, photoresist, SU-8, EpoClad, EpoCore
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