High conversion and quantum efficiency indium-rich p-InGaN/p-InGaN/n-InGaN solar cell

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 2021 English Publisher:Elsevier BVJournal:Physica B: Condensed Matter, volume 622, page 413,339 (issn: 0921-4526,

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Authors: H.U. Manzoor; M.A. Md Zawawi; M.Z. Pakhuruddin; S.S. Ng; Z. Hassan;

doi: 10.1016/j.physb.2021.413339

High conversion and quantum efficiency indium-rich p-InGaN/p-InGaN/n-InGaN solar cell

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Abstract

Abstract In this paper, an efficient three-layered p-In0.6Ga0.6N/p-In0.7Ga0.7N/n-In0.7Ga0.7N (PPN) solar cell was designed. The characteristics of the PPN-junction InGaN solar cell were simulated using the SCAPS-1D software. The effects of the thickness and carrier density of the PPN layer on solar cell performance were evaluated. The results were compared with those of the performance of the PN-junction solar cell. Results revealed that a thin top p-InGaN with a high carrier density had a considerable influence on the performance of the solar cell. Adding a p-InGaN layer as thin as 0.01 μm on the top of the PN-junction solar cell substantially improved the conversion efficiency of the solar cell from 21.39% (PN) to 30.23% (PPN).

Related Organizations

Universiti Sains Malaysia
Malaysia
University of Engineering and Technology Lahore
Pakistan

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