The luminosity upgrade of the Large Hadron Collider (LHC) at CERN to the Super LHC (sLHC) will increase the radiation dose at the experiments by roughly an order of magnitude. The elevated radiation levels require the LHC experiments to upgrade their tracking systems with extremely radiation hard detectors. Recent results on defect characterization of silicon materials and radiation hard technologies developed by the RD50 Collaboration for sLHC use are reported. Studies on n - and p -type silicon with Float Zone (FZ) and Czochralski technologies as well as 3D silicon detector designs are presented. Properties such as charge collection efficiency, electron signal, effective doping concentration (N eff ) and full depletion voltage (V fd ) after radiation exposure are compared to assess the performance of the different technologies.