Temperature, humidity, and bias acceleration model for a GaAs pHEMT process

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 2015 English Publisher:Elsevier BVJournal:Microelectronics Reliability, volume 55, pages 2,511-2,515 (issn: 0026-2714,

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Authors: Gergana I. Drandova;

doi: 10.1016/j.microrel.2015.09.027

Temperature, humidity, and bias acceleration model for a GaAs pHEMT process

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Abstract

Abstract This paper investigates the moisture failure acceleration factors for a GaAs pHEMT process. The activation energy Ea and the moisture accelerating factor n were extracted and were shown to be different from those previously reported for Si devices and for another GaAs pHEMT process. The impact of bias was studied and a humidity-induced semiconductor failure model, incorporating bias acceleration, was proposed.

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