On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP)

descriptionPublicationkeyboard_double_arrow_right Article 01 Aug 2011 English Publisher:Elsevier BVJournal:Microelectronics Reliability, volume 51, pages 1,309-1,314 (issn: 0026-2714,

Copyright policy )

Authors: Martin Sauter; Werner Simbürger; David Johnsson; Matthias Stecher;

doi: 10.1016/j.microrel.2011.02.012

On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP)

- Summary
- Metrics

Abstract

Abstract We present a new method for the on-wafer-characterisation for the reverse recovery behaviour of integrated diodes, which can perform on-wafer automated measurements over a wide range of different bias and pulsing conditions. The system is based on a Transmission-Line-Pulsing (TLP) technique and can be used to characterise diodes down to the regime of 10 ns, using pulses of several hundred volts and several Ampere peak current.

Related Organizations

Infineon Technologies (Germany)
Germany

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	6
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average