Supercritical drying process for high aspect-ratio HSQ nano-structures

descriptionPublicationkeyboard_double_arrow_right Article 01 Apr 2006 English Publisher:Elsevier BVJournal:Microelectronic Engineering, volume 83, pages 1,124-1,127 (issn: 0167-9317,

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Authors: T. Wahlbrink; Daniel Küpper; Y.M. Georgiev; J. Bolten; M. Möller; David Küpper; M.C. Lemme; +1 Authors

doi: 10.1016/j.mee.2006.01.026

Supercritical drying process for high aspect-ratio HSQ nano-structures

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Abstract

Supercritical resist drying allows the fabrication of high aspect-ratio (AR) resist patterns. The potential of this drying technique to increase the maximum achievable AR and the resolution of the overall lithographic process is analyzed for hydrogen silsesquioxane (HSQ). The maximum achievable AR is doubled compared to conventional nitrogen blow drying. Furthermore, the resolution is improved significantly.

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