Band-to-band tunneling related effects in a thin MOS structure
Copyright policy ) Vexler, Mikhail; Shulekin, Alexander; Grgec, Dalibor; Grekhov, Igor; Meinerzhagen, Bernd;
Band-to-band tunneling related effects in a thin MOS structure
The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 10^18-10^19 cm−3 with an 2-3 nm oxide is studied theoretically. The BBT is shown to supply the minority carriers toward the Si/SiO2 interface. This effect can support the inversion layer in the non-equilibrium and modify the I-V and C-V curves. The experimental data on MOS diodes, supporting the theory, are also presented.
Croatia
band-to-band tunneling; MOS; oxide; minority; inversion layer, tunneling; band-to-band; MOS; inversion layer; C-V curves; I-V curves
band-to-band tunneling; MOS; oxide; minority; inversion layer, tunneling; band-to-band; MOS; inversion layer; C-V curves; I-V curves
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These citations are derived from selected sources.
This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).
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This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.
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