Positron-trap centers in neutron-irradiated silicon containing hydrogen

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1995 Italy Publisher:Springer Science and Business Media LLCJournal:Applied Physics A: Materials Science & Processing, volume 60, pages 81-85 (issn: 0947-8396, eissn: 1432-0630,

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Authors: XIANG TI MENG; Brusa, Roberto Sennen; R. BRUSA;

doi: 10.1007/s003390050074 , 10.1007/bf01577618

handle: 11572/7275

Positron-trap centers in neutron-irradiated silicon containing hydrogen

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Abstract

The defect evolution as a function of the annealing temperature has been studied in monocrystalline silicon grown in a hydrogen atmosphere and irradiated with 3.6×1017 neutrons/cm2. Positron lifetime spectroscopy has been used and the results compared with infrated absorption measurements. Vacancy-H, vacancy-2H, vacancy-O−H and divacancy complexes withm hydrogen atoms (m<6) have been identified for the first time as possible positron traps.

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Italy

Related Organizations

University of Trento
Italy
Tsinghua University
China (People's Republic of)

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