The irradiation damages in the electron beam lithography (EBL) to Al-gate MOS capacitors in the ranges of 10–30 keV and 10−6–10−3C·cm−2 and the effects of annealing on damages at low temperature (<500°C) are given. The research on damages caused by high electron energy (30 ke V) and ultra-high dosages (10−4−10−3 C·cm−2) is important and useful to the EBL. The resolution can be improved by high electron energy. Both the EBL with vapor-development and without development are all operated at ultra-high dosages. After irradiations, the concentrations of interface states can increase by about one to two orders of magnitude and the flat-band voltages by about a few to more than ten volts. Under constant exposure dosages, the flat-band voltages are independent of the changes of electron energies in certain energy ranges. Under constant electron energies the concentrations of interface states are independent of the changes of exposure dosages in certain dosage ranges. After annealing, the flat-band voltages can recover the values before the irradiations for energies and dosages in the ranges of 10–30 keV and 1×10−6–6×10−3C·cm−2 respectively. The interface state concentrations due to the damages of ultra dosages can not/be removed completely.