High electron mobility transistors

descriptionPublicationkeyboard_double_arrow_right Article 01 Mar 1990 English Publisher:Springer Science and Business Media LLCJournal:Bulletin of Materials Science, volume 13, pages 121-133 (issn: 0250-4707, eissn: 0973-7669,

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Authors: S Subramanian;

doi: 10.1007/bf02744866

High electron mobility transistors

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Abstract

In this article, I briefly review the physics of the high electron mobility transistor (HEMT), the technological steps involved in the fabrication of the device, the current status, the remaining problems, and some areas of active research in which new developments might be expected in the future.

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Tata Institute of Fundamental Research
India

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