The photoluminescence of a large number of pure and doped single crystals of GaSe has been investigated in the temperature range from 4.2 to 300 °K with excitation intensities varying between 4·10−5 and 3·102 kW cm−2. The excitation was produced by the green line of a frequency doubled Nd: YAG laser. All crystals were grown in our laboratory, most of them by the Bridgman technique and some by transport reaction with iodine. Although no emission lines were found which were specific of the particular impurity introduced in the crystal, it was possible to classify the 4.2 °K spectra according to the amount of added impurities. Above 40 °K, the spectra of all crystals are identical. This dependence on temperature of the spectra is due to the rapid quenching between 20 and 40 °K of the luminescence resulting from recombinations at trap states and to the increasing importance at high temperatures of free-exciton recombinations. The two groups of lines associated with these two recombination channels constitute the principal part of all observed spectra. The variation of the spectra with temperature, pumping power and impurity content is interpreted as the result of a balance between the two recombination channels. A model of kinetics taking into account these two channels as well as the fact that the free exciton in GaSe resonates with the indirect minima of the conduction band is discussed in detail.