The oxidation rate and the oxide thickness of the hydrogen ion implanted silicon wafers were examined. It was observed that the native oxide thickness is higher for the H+ implanted Si(100) compared to the Si(111). Also the native oxide thickness depended on the implanted hydrogen distribution. The thickness increased with the hydrogen con-centration. The oxide thickness after wet oxidization of the H+ implanted Si(111) was higher than that of the unimplanted wafers. The oxide thickness also depended on the resistivity of the H+ implanted Si wafers. The suggested explanation is that in high energy H+ implanted Si the oxidation rate is higher as a result of the higher diffusion and reaction kinetics. All these measurements were done with the assumption that the implanted and the unimplanted samples have the same indices of refraction for the oxide as well as for the substrate.