Q-band injection-locked gunn diode oscillator

descriptionPublicationkeyboard_double_arrow_right Article 01 Mar 1996 English Publisher:Springer Science and Business Media LLCJournal:International Journal of Infrared and Millimeter Waves, volume 17, pages 527-533 (issn: 0195-9271, eissn: 1572-9559,

Copyright policy )

Authors: Xiaowei Zhu; Yiyuan Chen; Wei Hong;

doi: 10.1007/bf02088026

Q-band injection-locked gunn diode oscillator

- Summary
- Metrics

Abstract

The configuration and performance of a Q-band injection-locked Gunn oscillator are presented whose outport is connected with a phase-locked reference source by a circulator. The output power of the oscillator is more than 60mW at 46.1GHz. The single-sideband phase noise (SSB) is less than-71.7dBc/Hz offset 10KHz from the carrier, and the spectrum of clutter signal is less than -40dB.

Related Organizations

State Key Laboratory of Millimeter Waves
China (People's Republic of)
Southeast University
China (People's Republic of)

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	2
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Average
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average