Cooling rate effects in ZnO varistors

descriptionPublicationkeyboard_double_arrow_right Article 01 Dec 1992 English Publisher:Springer Science and Business Media LLCJournal:Journal of Materials Science: Materials in Electronics, volume 3, pages 218-221 (issn: 0957-4522, eissn: 1573-482X,

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Authors: M. S. Castro; L. Perissinotti; C. M. Aldao;

doi: 10.1007/bf00703029

Cooling rate effects in ZnO varistors

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Abstract

Cooling rate effects on ZnO-Bi2O3 varistors are presented. In particular, the oxygen vacancies (V o + ) concentration was determined by electron paramagnetic resonance (EPR) spectroscopy and related to the conductivity. It was found that a higher cooling rate provokes an increase of the V o + concentration and a higher conductivity. Current density versus temperature curves are fitted with a modified Schottky barrier model which reflects a higher active donor concentration near the grain interface.

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National University of Mar del Plata
Argentina

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