
doi: 10.1007/bf00681770
Measurements have been made over a range from liquid helium to room temperature of the electrical resistivity of a single crystal of vanadium with a residual resistance ratio (RRR) of 1974, the highest ever reported. The data were analyzed in terms of electron-impurity scattering, electron-electron scattering, and electron-phonon interband and intraband scattering. We have obtained aT2 electron-electron scattering coefficient of (1.6±0.2)×10−11 Ω cm/K2, in agreement with that obtained earlier in the same laboratory on a crystal with lower purity. Therefore, we conclude that electron-electron scattering does contribute measurably to the electrical resistivity of vanadium at low temperature.
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