The transverse magnetoresistivity of pure single crystals of aluminum (RRR ∼22,000) has been studied at 4.2 K and in high magnetic fields using the hard helicon technique. The measured magnetoresistivity is separated into a saturating and a linearly increasing part, and the effect of deformation and quenching on the linear component is studied. The linear component appears to be particularly sensitive to strains, and it is suggested that the dislocation structure is important. The Hall coefficient is also measured and is found to be field independent and equal to the free-electron value 1.023×10−10 Vm/AT within the experimental uncertainty of 1%.