Surface photovoltage measurement in MOS structures

descriptionPublicationkeyboard_double_arrow_right Article 01 Oct 1987 English Publisher:Springer Science and Business Media LLCJournal:Applied Physics A Solids and Surfaces, volume 44, pages 191-194 (issn: 0721-7250, eissn: 1432-0630,

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Authors: K. Pater;

doi: 10.1007/bf00626422

Surface photovoltage measurement in MOS structures

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Abstract

A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E t 1 = Ev + 0.25 eV and E t 2 = Ec − 0.30 eV in the oxide-silicon interface of the investigated structures had been found.

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