Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge, Si and GaAs

descriptionPublicationkeyboard_double_arrow_right Article 01 Mar 1979 English Publisher:Springer Science and Business Media LLCJournal:Optical and Quantum Electronics, volume 11, pages 109-117 (issn: 0306-8919, eissn: 1572-817X,

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Authors: Y. K. Su; C. Y. Chang; T. S. Wu;

doi: 10.1007/bf00624389

Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge, Si and GaAs

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Abstract

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs PIN avalanche photodiodes. The temperature coefficient of avalanche breakdown voltage in a high field region is studied. Finally the response time of a PIN APD in these materials is discussed.

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National Cheng Kung University
Taiwan

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