Optical absorptivity of ion-beam irradiated silicon

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1988 English Publisher:Springer Science and Business Media LLCJournal:Applied Physics A Solids and Surfaces, volume 45, pages 69-72 (issn: 0721-7250, eissn: 1432-0630,

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Authors: K. L. Bhatia; W. Kr�tschmer; S. Kalbitzer;

doi: 10.1007/bf00618765

Optical absorptivity of ion-beam irradiated silicon

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Abstract

Single-crystal layers of silicon on sapphire have been irradiated with Ne and Kr ions at room temperature. The concomitant changes in optical absorption have been measured as a function of photon energy. The absorptivity of the amorphized silicon is about one order of magnitude higher as compared to the crystalline state in the photon energy interval of 1.5–3 eV. This is sufficient for generating optical patterns of high contrast by irradiation of selected parts of the wafer.

Related Organizations

Max Planck Society
Germany
Max Planck Institute for Nuclear Physics
Germany

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