Hydrogenated amorphous silicon (a-Si:H) prepared by dc glow discharge in silane was investigated by positron lifetime measurements at room temperature. The lifetime spectrum shows considerably longer lifetimes than in simultaneously measured Si single crystals. The dominant component with the time constantτ2=402 ps is discussed thoroughly in conjunction with positron trapping at microvoids containing more than 10 to 15 vacancies. Positron trapping at H-saturated dangling bonds cannot be ruled out. The long-lived component withτ3=1800 ps (I3=0.06) indicates positronium formation at larger voids.