The mechanism of reactive sputtering

descriptionPublicationkeyboard_double_arrow_right Article 01 Sep 1968 English Publisher:Springer Science and Business Media LLCJournal:Journal of Materials Science, volume 3, pages 544-552 (issn: 0022-2461, eissn: 1573-4803,

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Authors: E. Hollands; D. S. Campbell;

doi: 10.1007/bf00549739

The mechanism of reactive sputtering

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Abstract

The reactive sputtering of tantalum in mixed argon/oxygen atmospheres at a total pressure of 3.0×10−4 torr has been investigated by means of measurements on deposition and growth rates, density, electrical properties and electron diffraction. The main controlling factor on all of the parameters was found to be the partial pressure of oxygen.

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