AbstractPurification of heavily doped electronic grade silicon by evaporation of N‐type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos.Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application.These facts enable process to be successfully scaled up to commercial volumes (150‐300 kg) and yield solar grade silicon. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)