Nitride‐based light emitting diodes with quaternary p‐AlInGaN surface layers

descriptionPublicationkeyboard_double_arrow_right Article 01 Jun 2006 English Publisher:WileyJournal:physica status solidi c, volume 3, pages 2,153-2,155 (issn: 1862-6351, eissn: 1610-1642,

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Authors: C. H. Kuo; S. J. Chang; G. C. Chi; K. T. Lam; Y. S. Sun;

doi: 10.1002/pssc.200565177

Nitride‐based light emitting diodes with quaternary p‐AlInGaN surface layers

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Abstract

AbstractWe have demonstrated bulk p‐AlInGaN layers and light emitting diodes (LEDs) with p‐AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p‐AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p‐AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p‐AlInGaN surface layer. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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