Lossless Dyakonov surface electromagnetic waves (DWs) that may be excited at the interfaces between non‐polar III‐nitride wurtzite semiconductors and optically isotropic dielectrics are considered theoretically. Because of stringent requirements on optical properties of the dielectrics suitable for DW excitation, those of them satisfying the existence conditions of surface electromagnetic waves are selected to operate in pair with AlGaN materials in a wide spectral range. DWs formed at the representative HfO2/AlN and SrTiO3/GaN interfaces are discusses in detail, including their propagation directions, angle bands of existence, and localization lengths of the surface waves near the interfaces.