Electrical Properties of Bismuth Telluride Doped with Bismuth Iodide

descriptionPublicationkeyboard_double_arrow_right Article 16 Jul 1989 German Publisher:WileyJournal:Physica Status Solidi (a), volume 114, pages 277-283 (issn: 0031-8965, eissn: 1521-396X,

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Authors: S. Biswas; R. Bhattacharya;

doi: 10.1002/pssa.2211140128

Electrical Properties of Bismuth Telluride Doped with Bismuth Iodide

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Abstract

Electrical conductivity and Hall coefficient of single crystals of Bi2Te3 doped with 3 wt% Bil3 are measured in thetemperature range 100 to 450 K. The concentrations of holes and electrons, their mobilities and activation energies are calculated without using any extrapolated value of temperature variation of conductivity. The valueof the activation energy obtained from the temperature variation of concentration of free carriers agrees fairly well with that obtained from the temperatures variation of electrical conductivity.

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