Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure

descriptionPublicationkeyboard_double_arrow_right Article 04 Jun 2019 English Publisher:WileyJournal:physica status solidi (a), volume 216 (issn: 1862-6300, eissn: 1862-6319,

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Authors: Zhibai Zhong; Xuanli Zheng; Jinchai Li; Jinjian Zheng; Yashu Zang; Wei Lin; Junyong Kang;

doi: 10.1002/pssa.201900059

Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure

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Abstract

Two types of high‐voltage flip chip deep ultraviolet light emitting diodes (HV‐FC DUV‐LEDs) are constructed with 2 × 2 and 3 × 3 cells, respectively, in which each single cell is fabricated with inclined sidewalls covered by SiO2/Al. The simulation results suggest that the structure with inclined sidewalls is much favorable to extract the transverse magnetic‐polarized lights. As a result, the light power as high as 145.7 mW is achieved in HV‐FC DUV‐LED constructed with 3 × 3 cells at 1000 mA.

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Xiamen University
China (People's Republic of)

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