High‐power microwave bipolar transistor modeling

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1992 Spain English Publisher:WileyJournal:Microwave and Optical Technology Letters, volume 5, pages 10-16 (issn: 0895-2477, eissn: 1098-2760,

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Authors: Asensio López, Alberto; Pérez Martínez, Félix;

doi: 10.1002/mop.4650050105

High‐power microwave bipolar transistor modeling

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Abstract

AbstractThis article introduces a model for high‐power microwave bipolar transistors and its associated parameter‐measuring strategy, whose inclusion of thermal phenomena in the dc characterization allows a good estimate of the device's thermal resistance to be obtained. This type of model provides important capabilities for solid‐state radar transmitter design.

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Spain

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Keywords

bipolar transistor, Telecomunicaciones, Modeling, CAD

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