Optical effects in hemts

descriptionPublicationkeyboard_double_arrow_right Article 01 Oct 1990 English Publisher:WileyJournal:Microwave and Optical Technology Letters, volume 3, pages 350-354 (issn: 0895-2477, eissn: 1098-2760,

Copyright policy )

Authors: A. A. de Sailes;

doi: 10.1002/mop.4650031007

Optical effects in hemts

- Summary
- Metrics

Abstract

AbstractThe major photoeffects affecting the DC and RF performance of depletion mode Al0.3Ga0.7As/GaAs HEMTs are presented. When photons are absorbed only in the GaAs layer, an increase in the electron concentration of the 2‐DEG channel is estimated (photoconductive effect). When photons are also absorbed in the AlGaAs layer the gate junction photovoltage is calculated (photovoltaic effect).

Related Organizations

Pontifical Catholic University of Rio de Janeiro
Brazil

Impact byBIP!

	selected citations These citations are derived from selected sources. This is an alternative to the "Influence" indicator, which also reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	9
	popularity This indicator reflects the "current" impact/attention (the "hype") of an article in the research community at large, based on the underlying citation network.	Average
	influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically).	Top 10%
	impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network.	Average