
doi: 10.1002/mop.23983
handle: 2108/27847
AbstractIn this contribution, an innovative design solution to realize small size Doherty power amplifier is presented. The idea consists in the realization of a unique output matching network for both carrier and peaking devices without losing the Doherty behavior. Experimental results performed on uneven Doherty amplifier using GaN HEMT device is given to demonstrate the proposed approach. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 256–258, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23983
semiconducting gallium, power amplifier, GaN HEMT, output matching, gallium alloy, Doherty amplifier, small size, harmonic control, gallium alloys; gallium nitride; power amplifiers; semiconducting gallium; Doherty amplifier; GaN HEMT; harmonic control; output matching; small size; harmonic analysis, harmonic analysis, Settore ING-INF/01 - ELETTRONICA, gallium nitride
semiconducting gallium, power amplifier, GaN HEMT, output matching, gallium alloy, Doherty amplifier, small size, harmonic control, gallium alloys; gallium nitride; power amplifiers; semiconducting gallium; Doherty amplifier; GaN HEMT; harmonic control; output matching; small size; harmonic analysis, harmonic analysis, Settore ING-INF/01 - ELETTRONICA, gallium nitride
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