AbstractThe step electrode transistor or GaAs Schottky‐barrier field‐effect transistor can oscillate above 6 GHz. A high Q and good temperature‐property dielectric resonator has been developed. Due to the microwave transistor and the dielectric‐resonator, the frequency stability can be made superior and noise characteristics better in the microwave oscillator, and integrable oscillator can be obtained. For the microwave oscillator design, the output power, stability, tunability and noise characteristics must be known. Therefore on using the negative‐resistance of the microwave transistor and transmission type of dielectric resonator, operation is analyzed for the oscillator using the transmission‐type dielectric‐resonator taken as an out‐of‐band resistive termination. First, changes of the oscillation power and frequency at the center frequency due to the negative resistance property are clarified; the frequency stability and oscillation power variations with the resonance frequency spread are considered; also clarified is the relation between the frequency stability and tunability. Finally, the noise comparisons among the above transistors and other solid‐state devices in the 7‐GHz band are presented.