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Determination of the Fermi Level, Fermi Distribution and Activity Coefficient for n‐SiC(P)

Name: Determination of the Fermi Level, Fermi Distribution and Activity Coefficient for n‐SiC(P)
Creator: S. K. Lilov
Keywords: 0103 physical sciences, 8. Economic growth, 0202 electrical engineering, electronic engineering, information engineering, 02 engineering and technology, 0210 nano-technology, 01 natural sciences, 7. Clean energy

descriptionPublicationkeyboard_double_arrow_right Article 01 Jan 1982Publisher:WileyJournal:Crystal Research and Technology, volume 17 (issn: 0232-1300, eissn: 1521-4079,

Authors: S. K. Lilov;

doi: 10.1002/crat.2170170121 , 10.1002/crat.2170170219

Determination of the Fermi Level, Fermi Distribution and Activity Coefficient for n‐SiC(P)

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Abstract

AbstractA calculation was made of the Fermi level value and Fermi distribution at different temperatures, concentrations of impurities and degrees of compensation in acceptive silicon carbide, doped by aluminium. The dependence of the activity coefficient of aluminium in the silicon carbide on the concentration and the temperature was established.

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Sofia University
Bulgaria

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