The emergence of new functionalities in nitrides is stronglyrelated to the growth and technology process controls, but alsoto the development of advanced characterization techniqueswith high spatial resolutions. Focused X-ray beams provideinnovative solutions to analyze quantitatively and correlativelythe strain and light emission by combining µLaue diffraction(µLaue) and X-ray excited optical luminescence (XEOL), thetwo signals being recorded for the same time duringmappings. This work will illustrate some recent experimentaland analysis breakthroughs obtained at the BM32 beamline ofthe European Synchrotron Radiation Facility. The newopportunities of this technique will be illustrated with nitridematerials in terms of structural analysis (epitaxialrelationships, strain, orientation) and light emission, andcompared to other techniques (e.g., EBSD andcathodoluminescence for electron probes andphotoluminescence for a laser light excitation).The light emission of GaN µwires [1-3] and µLEDs obtainedby etching GaN/InGaN Multiple Quantum Well (MQW) ofcommercial MOVPE UV heterostructures are studied byXEOL hyperspectral analysis, and the local strain variationand lattice rotation is obtained from µLaue analysis. Acomplete mapping of µLED takes benefits from the smallbeam size (~ 250 nm), short counting time (~1 s), and from thepolychromatic diffraction Laue pattern method that can recordmany Bragg reflections without rocking the sample.The XEOL data are analyzed in detail with the AI-relatedmethod of Non-negative Matrix Factorization. It is shown thatthe three main emissions of the samples (MQW, near bandedge peaks, and defects band) can be directly retrieved in afast and “ab initio” way. The µLaue analysis is first illustratedby a conventional method of indexation and of the refinementof the diffraction patterns (i.e., with the LaueTools programdeveloped on the ESRF BM32 beamline), but also with a newmethod based on feed-forward neural network that can indexin real-time the diffraction spots recorded during thesynchrotron experiments [4].The results of the combination of both methods enable thecorrelating of the visible emission and the crystalline structureof the materials, and therefore to improve manufacturingtechniques. It will be also demonstrated that fast scans allowfor obtaining a statistical description of the samples openingthe way to production control and a fast and systematicscreening of optoelectronic materials and microstructures.New potential applications for different MOVPE materialswill be given in this communication.References[1] Koester R et al. M-plane core-shell InGaN/GaN multiple-quantum-well on GaN wires for electroluminescent device.Nano Lett. 2011; 11: 4839.