
Temperature influence on kinetic of silicon phase transformations in imprint of indenter was investigated by the method of raman spectroscopy.
Методом рамановской спектроскопии исследовано влияние температуры на кинетику фазовых превращений кремния внутри отпечатка индентора.
МОНОКРИСТАЛЛЫ КРЕМНИЯ, ИНДЕНТИРОВАНИЕ, ФАЗОВЫЕ ПРЕВРАЩЕНИЯ ПОД ИНДЕНТОРОМ, ИЗОХРОННЫЙ ОТЖИГ
МОНОКРИСТАЛЛЫ КРЕМНИЯ, ИНДЕНТИРОВАНИЕ, ФАЗОВЫЕ ПРЕВРАЩЕНИЯ ПОД ИНДЕНТОРОМ, ИЗОХРОННЫЙ ОТЖИГ
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