The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In the present paper we propose using the methods of atomic-force microscopy to study the local distribution of electrical properties of the V-defects that form in epitaxial films of HgCdTe during their growth process via molecular beam epitaxy. We demonstrate that a complex approach to studying the electrical properties of a predefined region of a V-defect allows one to obtain more detailed information on its properties. Using scanning spreading resistance microscopy, we show that, for a V-defect when the applied bias is increased, the surface area that participates in the process of charge carrier transfer also increases almost linearly. The presence of a potential barrier on the periphery of individual crystal grains that form the V-defect interferes with the flow of current and also affects the distribution of surface potential and capacitive contrast.